A Structural Investigation of Ga32xIn51xSn2O16
نویسندگان
چکیده
The structure of the recently reported transparent conductor, Ga32xIn51xSn2O16 (0.3(x(1.6), was established by a combination of high-resolution electron microscopy, convergent-beam electron diffraction, and Rietveld analysis of powder diffraction data (X-ray and time-of-flight neutron methods). This ‘‘T-phase’’ compound has an anion-deficient fluorite-derivative structure whose space group is I41/a. Although there are similarities to the parent oxide structures, the T-phase lacks one of the distorted InO6 octahedra observed in In2O3, which may account for its inability to be donor-doped by Sn. ( 1998 Academic Press
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